MBR4045PT
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45
V
Average Rectified Forward Current
(Rated VR, TC
= 125
°C) Per Diode
Per Device
IF(AV)
20
40
A
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz
@ TC
= 90
°C) Per Diode
IFRM
40
A
Non?Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase,
60 Hz)
IFSM
400
A
Peak Repetitive Reverse Current,
(2.0 s, 1.0 kHz)
IRRM
2.0
A
Storage Temperature Range
Tstg
?65 to +175
°C
Operating Junction Temperature (Note 1)
TJ
?65 to +175
°C
Peak Surge Junction Temperature
(Forward Current Applied)
TJ(pk)
175
°C
Voltage Rate of Change
dv/dt
10,000
V/s
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may
affect device reliability.
1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ
< 1/R
JA.
THERMAL CHARACTERISTICS
Characteristic
Conditions
Symbol
Max
Unit
Maximum Thermal Resistance, Junction?to?Case
Minimum Pad
RJC
1.4
°C/W
Maximum Thermal Resistance, Junction?to?Ambient
Minimum Pad
RJA
55
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
Instantaneous Forward Voltage (Note 2)
(iF
= 20 A, T
J
= 25
°C)
(iF
= 20 A, T
J
= 125
°C)
(iF
= 40 A, T
J
= 25
°C)
(iF
= 40 A, T
J
= 125
°C)
VF
?
?
?
?
0.53
0.46
0.64
0.62
0.70
0.60
0.80
0.75
V
Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TJ
= 25
°C)
(Rated DC Voltage, TJ
= 125
°C)
iR
?
?
0.09
30
1.0
50
mA
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